Tantalum nitride (TaN) is an inorganic chemical compound. It is sometimes used to create barrier or "glue" layers between copper, other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits to create thin film surface mount resistors and have other electronic applications.
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Tantalum Nitride Sputtering Targets
Purity: 99.5%;
Circular: Diameter <= 14 inch, Thickness >= 1mm;
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1mm.
Bonding is recommended for these materials. Many materials have characteristics that are not amenable to sputtering, such as brittleness and low thermal conductivity. This material may require a special ramp up and ramp down procedures. This process may not be necessary for other materials. Targets that have low thermal conductivity are susceptible to thermal shock.
Physical Vapor Deposition (PVD)
Optical
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Cleaning and final packaging, Cleaned for use in vacuum,
Protection from environmental contaminants
Protection during shipment
99.5% minimum purity
Smaller sizes also available for R&D applications
Sputtering target bonding service
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